BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Data Sheet
Revision 3.1, 2014-03-25
RF & Protection Devices
Edition 2014-03-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC
Revision History: 2014-03-25, Revision 3.1
Previous Revision: 2013-07-08, Revision 3.0
Page
Subjects (major changes since last revision)
7
update feature list
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Data Sheet
3
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
2.1
2.2
2.3
2.4
2.4.1
2.4.2
2.4.3
2.5
2.6
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TX Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
RX Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Temperature Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Power Detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
3.1
3.2
3.3
3.4
3.5
Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board and Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Equivalent Circuit Diagram of MMIC Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
16
17
20
22
4
4.1
4.2
4.3
Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
23
23
24
25
Data Sheet
4
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Data Sheet
BGT24MTR11 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Timing Diagram of the SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Detail of Compensation Structure (valid for appl. board mat. Ro4350B, 0.254mm acc. to Fig. 5) . 20
Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Equivalent Circuit Diagram of MMIC Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Recommended Footprint and Stencil Layout for the VQFN32-9 Package . . . . . . . . . . . . . . . . . . . 23
Reflow Profile for BGT24MTR11 (VQFN32-9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package Outline (Top, Side and Bottom View) of VQFN32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Marking Layout VQFN32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Tape of VQFN32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Data Sheet
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Typical Characteristics TA = -40 .. 105 °C, SPI-Bit 4 = high . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Typical Characteristics TA = -40 .. 105 °C for f = 24.0 .. 25.5 GHz or TA = -40 .. 85 °C for f = 24.0 ..
26.0 GHz, SPI-Bit 4 = high 11
Typical Characteristics TA = -40 .. 105 °C for f = 24.0 .. 25.5 GHz or TA = -40 .. 85 °C for f = 24.0 ..
26.0 GHz, SPI-Bit 4 = high 13
Typical Characteristics Temperature Sensor TA = -40 .. 105 °C . . . . . . . . . . . . . . . . . . . . . . . . . 14
Typical Characteristics Power Detector TA = -40 .. 105 °C, VCC = 3.3 V . . . . . . . . . . . . . . . . . . . 14
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
SPI Data Bit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SPI Timing and Logic Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Truth Table AMUX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision 3.1, 2014-03-25
Silicon Germanium 24 GHz Transceiver
MMIC
1
•
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•
•
•
•
•
•
•
•
•
•
•
•
•
BGT24MTR11
Features
24 GHz transceiver MMIC
Fully integrated low phase noise VCO
Switchable prescaler with 1.5 GHz and 23 kHz output
On chip power and temperature sensors
Gilbert based homodyne quadrature receiver
Single ended RF and LO terminals
Low noise figure NFSSB: 12 dB
High conversion gain: 26 dB
High 1 dB input compression point: -12 dBm
Single supply voltage 3.3 V
Power consumption 500 mW in continuous operating mode
200 GHz bipolar SiGe:C technology b7hf200
Fully ESD protected device
VQFN-32-9 leadless plastic package incl. LTI feature
Pb-free (RoHS compliant) package
Description
The BGT24MTR11 is a Silicon Germanium MMIC for signal generation and reception, operating from 24.0 up to
26.0 GHz. It is based on a 24 GHz fundamental voltage controlled oscillator. Switchable frequency prescalers are
included with output frequencies of 1.5 GHz and 23 kHz. The main RF output delivers typ. 11dBm signal power to
feed an antenna and an auxiliary LO output is available to provide LO signal to separate receiver components.
A LNA provides low noise figure and a RC polyphase filter (PPF) is used for LO quadrature phase generation of
the homodyne quadrature downconversion mixer. Output power sensors as well as a temperature sensor are
implemented for monitoring purposes. The device is controlled via SPI and is manufactured in a 0.18µm SiGe:C
technology offering a cutoff frequency of 200 GHz. The MMIC is packaged in a 32 pin leadless RoHs compliant
VQFN package.
Product Name
Package
Chip
Marking
BGT24MTR11
VQFN32-9
T1524
BGT24MTR11
Data Sheet
7
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Features
Q1 Q1N
SI CS CLK
Q2
3
2
SPI
/65536
TX Power
Sensor
AMUX
ANA
2
TX
TXX
PA
VCCTEMP
TEMP
Temp.
Sensor
/16
FINE
TXOFF
Buffer
LO
MPA
COARSE
LO POWER
SENSOR
IFQ
IFQX
90°
LO
Buffer
PPF*
LNA
RFIN
0°
IFI
IFIX
* Poly Phase Filter
BGT24MTR11_Chip_BID.vsd
Figure 1
Data Sheet
BGT24MTR11 Block Diagram
8
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
TA = -40 °C to 105 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise
specified)1)
Table 1
Absolute Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC / VCCTEMP -0.3
–
3.6
V
–
DC voltage at RF Pins TX,
TXX, LO, RFIN1, RFIN2
VDCRF
0
–
0
V
MMIC provides short circuit
to GND for all RF pins
DC voltage at Pins IFI, IFIX,
IFQ, IFQX
VDCIF
0
–
Vcc
V
–
DC current into Pins IFI, IFIX,
IFQ, IFQX
IIF
-8.5
–
3.5
mA
Max. values indicate
current due to short circuit
to GND and Vcc resp.
DC voltage at Pin ANA
VDCANA
-0.3
–
3.6
V
–
DC current into Pin ANA (Sink) IANA SINK
125
350
500
µA
Max. values indicate
current due to short circuit
to GND and Vcc resp.
-7
–
–
mA
–
–
–
3.5
mA
Max. values indicate
current due to short circuit
to GND and Vcc resp.
DC current into Pin ANA
(Source)
IANA SOURCE
DC current into Pin VCCTEMP IVCCTEMP
DC voltage at Pin TEMP
VDCTEMP
0
–
Vcc
V
–
DC current into Pin TEMP
ITEMP
-1
–
1.5
mA
Max. values indicate
current due to short circuit
to GND and Vcc resp.
DC voltage at Pins Q1, Q1N
VDCQ1x
Vcc-0.3 –
Vcc
V
–
DC current into Pins Q1, Q1N
IQ1x
-8
–
12
mA
–
DC voltage at Pin Q2
VDCQ2
-0.3
–
3.6
V
–
-3
–
3
mA
–
DC current into Pin Q2 enabled IQ2EN
DC current into Pin Q2
disabled
IQ2DIS
-10
–
10
µA
–
DC voltage at SPI input Pins
SI, CLK, CS
VDCSPIIN
-0.3
–
3.6
V
–
–
–
3
mA
–
–
–
0
dBm
–
DC current into SPI input Pins ISPIIN
SI, CLK, CS
RF input power into Pin RFIN
PRF
1) Not subject to production test, specified by design
Data Sheet
9
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
Table 1
Absolute Maximum Ratings (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
DC voltage at Pins Fine,
Coarse
VFine, VCoarse
0
–
5
V
–
DC current into Pins Fine,
Coarse
IFine, ICoarse
-1
–
0.11
mA
Positive currents if VTUNE >
VCC
DC voltage at Pin TXOFF
VDCTXOFF
-0.3
–
3.6
V
–
Total power dissipation
PDISS
–
–
750
mW
With BIST deactivated
Junction temperature
TJ
-40
–
150
°C
–
Ambient temperature range
TA
-40
–
105
°C
TA = temperature at
package soldering point
Storage temperature range
TSTG
-40
–
150
°C
–
Attention: Stresses exceeding the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
1)
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
–
40
Unit
Note / Test Condition
K/W
–
Unit
Note / Test Condition
1) For calculation of RthJA please refer to application note thermal resistance
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
ESD robustness, HBM
Symbol
1)
2)
ESD robustness, CDM
Values
Min.
Typ.
Max.
VESD-HBM
-1
–
1
kV
All pins
VESD-CDM
-500
–
500
V
All pins
1) According to ANSI/ESDA/JEDEC JS-001 (R = 1.5kΩ, C = 100pF) for Electrostatic Discharge Sensitivity Testing, Human
Body Model (HBM)-Component Level
2) According to JEDEC JESD22-C101 Field-Induced Charged Device Model (CDM), Test Method for Electrostatic-DischargeWithstand Thresholds of Microelectronic Components
Data Sheet
10
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.4
Measured RF Characteristics
2.4.1
Power Supply
Table 4
Typical Characteristics TA = -40 .. 105 °C, SPI-Bit 4 = high
Symbol
Parameter
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Supply voltage
VCC
3.135
3.3
3.465
V
–
Supply current
ICC
110
150
190
mA
Supply current typ.
5mA decreased if
SPI-Bit 4 = low
Supply voltage temperature
sensor
VCCTemp
3.135
3.3
3.465
V
–
Supply current temperature
sensor
ICCTemp
1.3
2.2
3
mA
–
2.4.2
TX Section
Table 5
Typical Characteristics TA = -40 .. 105 °C for f = 24.0 .. 25.5 GHz or TA = -40 .. 85 °C for f = 24.0
.. 26.0 GHz, SPI-Bit 4 = high1)
Symbol
Parameter
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
VCO frequency range
fVCO
24.0
–
26.0
GHz
@ TA ≤ 85°C and VF
= VC
VCO frequency range
fVCO
24.0
–
25.5
GHz
@ TA ≤ 105°C and
VF = VC
VCO fine tuning voltage2)
VF
0.53)
–
54)
V
–
4)
V
–
2)
3)
0.5
–
5
VCO tuning slope FINE
VC
Δ f / Δ VF
–
–
1500
MHz/V
–
VCO tuning slope COARSE
Δ f / Δ VC
–
–
3000
MHz/V
–
VCO temperature drift
Δf / ΔT
-10
-6
0
MHz/K
Min. @ T = -40°C
VCO pushing
Δf / ΔVCC
-350
60
350
MHz/V
Absolute values
VCO phase noise
PN
–
-85
-75
dBc/Hz @ 100kHz offset,
VF = VC
TX/TXX load impedance
ZTX
ZTXX
–
19.8-j20.9 –
18-j17.3
Ω
Typical value at
24.125GHz and
VSWR ≤ 2:1
Max. TX output power
PTX
5
11
15
dBm
24.0GHz ≤ f ≤
26.0GHz
Max. TX output power for
ISM band
PTXISM
6
11
15
dBm
24.0GHz ≤ f ≤
24.25GHz
VCO coarse tuning voltage
Data Sheet
11
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
Table 5
Typical Characteristics TA = -40 .. 105 °C for f = 24.0 .. 25.5 GHz or TA = -40 .. 85 °C for f = 24.0
.. 26.0 GHz, SPI-Bit 4 = high1) (cont’d)
Parameter
TX ouput power adjustable
range
Symbol
aTX
TX output power in “off” mode5) PTXoff
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
3
9
–
dB
Adjustable via SPI
–
–
-30
dBm
Parameter based on
IFX eval board
design
LO load impedance
ZLO
–
24.4-j25.8 –
Ω
Typical value at
24.125GHz and
VSWR ≤ 2:1
LO output power6)
PLO
-8
0
6
dBm
SPI-Bit 4 = high
4
Q1 Prescaler division ratio
DQ1
–
2
–
–
–
Q1 Prescaler output power
PQ1
-13
-9
-5
dBm
Q1 loaded with 100
Ohm (AC- coupled)
Q1 load impedance
ZQ1
DQ2
–
100
–
Ω
–
–
20
2
–
–
–
Q2 Prescaler max. output
voltage
VmaxQ2
2.4
–
–
V
Test condition: Q2
loaded with high
impedance probe (1
MOhm,13 pF)
Q2 Prescaler min. output
voltage
VminQ2
–
–
0.8
V
Test condition: Q2
loaded with high
impedance probe (1
MOhm, 13 pF)
Q2 Prescaler max. output
source current
Imaxsource Q2
1.2
–
–
mA
Test condition: Q2
loaded with 50 Ohm
to Vcc
Q2 Prescaler max. output sink
current
Imaxsink Q2
1.2
–
–
mA
Test condition: Q2
loaded with 50 Ohm
to Vcc
Q2 Prescaler output resistance RQ2,DIS
in disable mode
100
–
–
kΩ
–
Voltage at Txoff for disabeling
TX output power
VTX,OFF
1.5
–
–
V
–
Voltage at Txoff for enabeling
TX output power
VTX,ON
–
–
0.5
V
–
TXon/off switching time
tON/OFF
–
–
500
ns
–
Q2 Prescaler division ratio
1) Performance based on Application Circuit Figure 2 on Page 15, Cross Section of Application Board, Compensation
Structures and Application Board Layout Figure 4 on Page 20ff and Footprint Figure 8 on Page 23
2) At tuning pins chipinternal pull-up of 60kΩ ±20% to VCC; max.- and min. temperature tuning voltage limits are chosen in
a way that they can be linearly interpolated within operating temperature range
3) Min. limit @ 25°C = 0.8V; min. limit @ 105°C = 1.15V
4) Max. limit for max. frequency of 24.25GHz = 3.1V; max. limit for max. frequency of 24.5GHz = 3.8V
5) Guaranteed by device design
6) High LO buffer output power in “high” mode otherwise typ. 4dB reduced LO-output power
Data Sheet
12
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.4.3
RX Section
Table 6
Typical Characteristics TA = -40 .. 105 °C for f = 24.0 .. 25.5 GHz or TA = -40 .. 85 °C for f = 24.0
.. 26.0 GHz, SPI-Bit 4 = high1)
Symbol
Parameter
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
VCO frequency range
fVCO
24.0
–
26.0
GHz
@ TA ≤ 85°C
VCO frequency range
24.0
–
25.5
GHz
@ TA ≤ 105°C
RFIN port impedance
fVCO
ZRFIN
–
22.9-j14.9 –
Ω
Typical value at
24.125GHz and
VSWR ≤ 2:1
RFIN VSWR
VSWR
–
–
2:1
–
At source port of offchip compensation
network as proposed
IF frequency range
fIF
0
–
10
MHz
–
IF output impedance
ZIF
850
1000
1150
Ω
–
Leakage LO to RFIN
LLO=>RFIN
–
–
-30
dBm
Parameter based on
IFX eval board
design
Voltage conversion gain3)
GC
18
26
31
dB
RLOAD,IF > 10 kΩ
LNA gain reduction
ΔGCLG
3
5
8
dB
–
SSB noise figure
NSSB
–
12
20
dB
Single sideband at
fIF = 100 kHz
IF 1/f corner frequency
fc
–
10
20
kHz
–
Input compression point
IP1dB
-17
-12
–
dBm
–
Input 3‘rd order intercept point
IIP3
-8
-4
–
dBm
–
Quadrat. phase imbalance
εp
-10
–
10
deg
–
Quadrat. amplitude imbalance
εA
-1
–
1
dB
–
2)
1) Performance based on Application Circuit Figure 2 on Page 15, Cross Section of Application Board, Compensation
Structures and Application Board Layout Figure 4 on Page 20ff and Footprint Figure 8 on Page 23
2) Guaranteed by device design
3) Lowest gain at high temperature, highest gain at low temperature
Data Sheet
13
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.5
Temperature Sensor
Monitoring of the chip temperature is provided by the on-chip temperature sensor which delivers temperatureproportional voltage to the TEMP output. The temp. sensor can be independently biased through VCCTEMP.
Thereby the chip temperature can be monitored while the main supply of the transceiver is switched off.
Table 7
Typical Characteristics Temperature Sensor TA = -40 .. 105 °C1)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
-40
–
105
°C
–
Temperature range
TTSENS
Output temperature voltage
VOUT,TEMP –
1.50
–
V
@ 25°C
Sensitivity
STSENS
–
4.5
–
mV/K
–
Overall accuracy error
ErrTSENS
–
–
±15
K
–
1) all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
2.6
Power Detector
For RF output power indication, peak voltage detectors are connected to the output of the TX power amplifier and
to the LO medium power amplifier. To eliminate temperature and supply voltage variations, a reference output
voltage VREF is available through the ANA output for the TX and LO power sensor. The compensated detector
output voltage is given by the difference between VOUT and VREF for both power sensors respectively. This voltage
is proportional to the RF voltage swing at the individual amplifier outputs, its characteristic is non-directional.
Table 8
Typical Characteristics Power Detector TA = -40 .. 105 °C, VCC = 3.3 V1)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Power range
PPSENS
-10
–
15
dBm
–
TX power sensor output
VOUT,TX VREF,TX
–
550
–
mV
@ PTX = 11 dBm
LO power sensor output
VOUT,LO VREF,LO
–
50
–
mV
@ PLO = 0 dBm
1) all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Data Sheet
14
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
TXX
TX
VEE
SI
CLK
CS
Application Circuit Schematic
VEE
3.1
ANA
Application Circuit and Block Diagram
TXOFF
3
26
25
24
23
22
21
20
19
18
4)
C4
1μF
VCC
3)
C5
470μF
17
n.c.
27
16
TEST PIN
2)
LO
28
15
TEST PIN
2)
29
14
IFIX
30
13
IFI
Q1
31
12
IFQ
VEE
32
11
VEE
7
6
5
1)
R1
100Ω
8
1)
C2
1μF
1)
C3
1μF
FINE
VEE
9
10
IFQX
4
RFIN
3
2
VEE
Q1N
1
Q2
C1
1μF
TEMP
VEE
VCCTEMP
1)
R2
100Ω
COARSE
VCC
3)
1) RC-time constants to be defined according to modulation requirements.
2) Connect pin 15 and 16
3) Galvanic connection of VCC pins on silicon
4) Optional value: according to quality of supply voltage
BGT24MTR11_Appl_BID.vsd
Figure 2
Application Circuit with Chip Outline (Top View)
Table 9
Bill of Materials
Part Number
Part Type
Manufacturer
Size
Comment
C1 ... C5
Chip capacitor
Various
Various
–
R1 ... R2
Chip resistor
Various
0402
–
Data Sheet
15
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.2
Pin Description
Table 10
Pin Definition and Function
Pin No.
Name
Function
1
Q1N
Complementary prescaler output 1.5GHz
2
Q2
Prescaler output 23kHz
3
VEE
Ground
4
FINE
VCO fine tuning input
5
COARSE
VCO coarse tuning input
6
VCC
Supply voltage; Total current divided equal on both VCC pins
7
RFIN
RF input downconverter
8
VEE
Ground
9
VEE
Ground
10
IFQX
Complementary quadrature phase IF output downconverter
11
VEE
Ground
12
IFQ
Quadrature phase IF output downconverter
13
IFI
In phase IF output downconverter
14
IFIX
Complementary in phase IF output downconverter
15
TEST PIN
Test pin; DC coupled pin
16
TEST PIN
Test pin; DC coupled pin
17
VCC
Supply voltage; Total current divided equal on both VCC pins
18
CS
Chip select input SPI (inverted)
19
CLK
Clock input SPI interface
20
SI
Data input SPI interface
21
VEE
Ground
22
TX
Transmit output
23
TXX
Complementary transmit output
24
VEE
Ground
25
ANA
Analog output
26
TXOFF
Pulsable Pin / Please connect to VEE in case TXOFF function is
controlled via SPI
27
n.c.
Not connected
28
LO
LO output
29
VCCTEMP
Temperature sensor supply voltage
30
TEMP
Temperature sensor output
31
Q1
Prescaler output 1.5GHz
32
VEE
Ground
Data Sheet
16
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.3
SPI
1.) Three signals control the serial peripheral interface of the BGT24MTR11:
SI (Data); CLK (Clock); CS (Chip select)
2.) The data bits SI (MSB first) are read in the shift register with falling edge of the CLK signal.
Please make sure, that the data is present at least 10 ns before and at least 10 ns after the falling edge of the
clock signal.
3.) The CLK and CS signals are combined internally.
At least 20 ns before first rising edge of the first CLK signal CS needs to be in "low" state.
While the Data is read, CS has to remain in "low" state.
4.) When Data read in is finished, the shift register content will be written in the latch at the rising edge of the CS
signal. The time between the last falling edge of the CLK signal and the rising edge of the CS must be at least 20
ns.
Table 11
SPI Data Bit Description
Data Bit
Name
Description (Logic High)
Power ON State
15 (MSB)
GS
LNA Gain reduction
low
14 ..13
–
Not used
low
12
DIS_PA
high
TX power disabled, in case
TXon/off function is controlled
via TXOFF pin, this bit needs to
be set in low state
11
AMUX2
Analog multiplexer control bit 2 high
10
Test Bit
Test bit, must be low otherwise low
malfunction
9
Test Bit
Test bit, must be low otherwise low
malfunction
8
AMUX1
Analog multiplexer control bit 1 low
7
AMUX0
Analog multiplexer control bit 0 low
6
DIS_DIV64k
Disable 64k divider
low
5
DIS_DIV16
Disable 16 divider
low
4
PC2_BUF
High LO buffer output power in low
“high” mode otherwise typ. 4dB
reduced LO-output power
3
PC1_BUF
High TX buffer output power
low
2
PC2_PA
TX power reduction bit 2
high
1
PC1_PA
TX power reduction bit 1
high
0
PC0_PA
TX power reduction bit 0
high
Data Sheet
17
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
BGT24MTR11_SPI.vsd
Figure 3
Timing Diagram of the SPI
Table 12
SPI Timing and Logic Levels
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Serial clock frequency
fSCLK
0
–
50
MHz
Serial clock high time
fSCLK(H)
10
–
–
ns
Serial clock low time
tSCLK(L)
10
–
–
ns
Chip select lead time
tCS(lead)
20
–
–
ns
Chip select lag time
tCS(lag)
20
–
–
ns
Data setup time
tSI(su)
10
–
–
ns
Data hold time
tSI(h)
10
–
–
ns
Low level (SI, CLK, CS)
VIN(L)
0
–
0.8
V
High level (SI, CLK, CS)
VIN(H)
2.0
–
VCC
V
Input capacitance (SI, CLK, CS)
CIN
–
–
2
pF
Input current (SI, CLK, CS)
IIN
-150
–
150
µA
Table 13
Truth Table AMUX
Output signal ANA
AMUX2
AMUX1
AMUX0
VOUT,TX
low
low
low
VREF,TX
low
low
high
VOUT,LO
low
high
low
VREF,LO
low
high
high
VTEMP
high
low
low
Test_Signal1
high
low
high
Data Sheet
18
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Table 13
Truth Table AMUX (cont’d)
Output signal ANA
AMUX2
AMUX1
AMUX0
Test_Signal2
high
high
low
Test_Signal2
high
high
high
Data Sheet
19
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.4
Application Board and Reflow Profile
Blind-Vias
Vias
Ro4350B, 0.254mm
Copper
35um
FR4, 0.5mm
FR4, 0.25mm
BGT24MTR11_Cross_Section_View.vsd
Figure 4
Cross-Section View of Application Board
Single-Ended RFIN
0.50
Single-Ended LO
0.50
Differential TX
0.50
1.10
0.30
0.30
Data Sheet
0.55
0.30
All specified values in [mm]
Optimized for ISM-Band 24.0 .. 24.25GHz
Figure 5
1.60
1.65
0.55
0.55
1.80
0.85
1.10
BGT24MTR11_VQFN32-9-CS.vsd
Detail of Compensation Structure (valid for appl. board mat. Ro4350B, 0.254mm acc. to Fig. 5)
20
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Top layer (top view)
Mid1 and Bottom layer (top
view)
Mid2 layer (top view)
BGT24MTR11_App_Board_Layout.vsd
Figure 6
Application Board Layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCBlayout. The compensation structure is critical for RF performance. Via holes as recommended on one of next
pages (not shown above).
Data Sheet
21
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.5
Equivalent Circuit Diagram of MMIC Interfaces
Pin 2
Pin 1, 31
Pin 4, 5
VCC
VCC
VCC
60kΩ
FINE,
COARSE
50Ω
300Ω
120Ω
Q1, Q1N
Q2
50Ω
120Ω
VEE
VEE
VEE
40Ω
VEE
Tolerance of all resistors +/- 20%
Pin 7, 22, 23
Pin 10, 12, 13, 14
Pin 18, 19, 20
VCC
VCC
Pin 28
400Ω
RFIN, TX,
TXX
IFx
CS, CLK, SI
100Ω
20Ω
VEE
54kΩ
LO
VEE
VEE
VEE
Pin 25
Pin 26
VCC
Pin 30
VCC
SPI
VCC
1.68kΩ
ANA
40Ω
TXOFF
6.25kΩ
6.25kΩ
TEMP
100Ω
1500Ω
30kΩ
VEE
VEE
Data Sheet
VEE
BGT24MTR11_ESB.vsd
VEE
Figure 7
1500Ω
Equivalent Circuit Diagram of MMIC Interfaces
22
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4
Physical Characteristics
4.1
Package Footprint
Copper
4.3
Solder Mask
3.9
Vias
3.2
Pastefree
Area
3.3
2.9
2.2
0.1
1.0
0.7
0.5
0.1
0.2
PIN 1
0.85
0.3
0.3
All specified values in [mm]
Figure 8
Data Sheet
BGT24MTR11_VQFN32-9-FP.vsd
Recommended Footprint and Stencil Layout for the VQFN32-9 Package
23
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4.2
Reflow Profile
Soldering process qualified during qualification with “Preconditioning MSL-3: 30°C. 60%r.h., 192h, according to
JEDEC JSTD20”.
Reflow Profile recommended by Infineon Technologies AG
(based on IPC/JEDEC J-STD-020C)
BGT24MTR11_Reflow_Profile.vsd
Figure 9
Data Sheet
Reflow Profile for BGT24MTR11 (VQFN32-9)
24
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4.3
Package Dimensions
All specified values in [mm]
BGT24MTR11_VQFN32-9-PO.vsd
Figure 10
Package Outline (Top, Side and Bottom View) of VQFN32-9
BGT24MTR11_VQFN32-9_ML.vsd
Figure 11
Data Sheet
Marking Layout VQFN32-9
25
Revision 3.1, 2014-03-25
BGT24MTR11
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
All specified values in [mm]
BGT24MTR11_VQFN32-9_CT.vsd
Figure 12
Data Sheet
Tape of VQFN32-9
26
Revision 3.1, 2014-03-25
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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